Core area, frequency range and power consumption are dependent on process, libraries and optimizations. The numbers quoted
above are illustrative of synthesized cores using general purpose TSMC process technologies and ARM Artisan standard cell
libraries and RAMs.
The speed optimized implementations refer to the library choices and synthesis flow decisions and tradeoffs made in order
to achieve the target frequency performance. The area optimized implementations refer to the library choices and synthesis
flow decisions and tradeoffs made in order to achieve a target area density.
The cache sizes are specified as InstructionCache/DataCache. The area w/o cache numbers quoted exclude RAM area, but include
all logic including memory management, cache control and debug. The area with cache numbers quoted includes the core, the
specified instruction and data caches and all necessary RAMs.
* Worst case conditions – 0.18µm process - 1.62V, 125C, slow silicon ; 0.13µm process - 1.08V, 125C, slow silicon ; 90nm
process - 0.9V, 125C, slow silicon † Typical case conditions– 0.18µm process–1.8V, 25C, typical silicon ; 0.13µm process - 1.2V, 25C, typical silicon ; 90nm
process - 1V, 25C, typical silicon
|