ARM’s continuing collaboration to develop higher performance and lower power devices
In last year’s annual report we described how ARM was working with IBM, Chartered and Samsung to develop technology around the 32/28nm process node. During 2009, ARM and its Partners have further extended the partnership with the addition of GLOBALFOUNDRIES and leading EDA companies, to develop optimised chips on a 28nm manufacturing process.
The companies have announced that ARM will develop a comprehensive physical IP 28nm design platform for the GLOBALFOUNDRIES 28nm High-K Metal Gate manufacturing process. This agreement includes the creation of optimised ARM processor implementations that will enable the companies’ mutual customers to build chips both for high-performance and low-power implementations. With a robust infrastructure and industry ecosystem we are the stewards of maintaining long-term sustainability in the embedded marketplace.
“ This collaboration with ARM further enhances our focus and leadership in delivering manufacturing and technology excellence at the leading edge. This highly complementary partnership leverages ARM’s architectural leadership along with GLOBALFOUNDRIES’ advanced technology and production capabilities to enable. The deployment of 28nm SoC designs with exceptional performance for next-generation consumer devices.”
Doug Grose, chief executive officer, GLOBALFOUNDRIES
